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Integration of a (–Cu–S–)n plane in a metal–organic framework affords high electrical conductivity
2019/4/15 11:39:02

Dear XFNANO friends:

Nowadays, MOF materials is become more popular in nano fields.

Recently, Kuang-Lieh Lu's research team from Institute of Chemistry, Academia Sinica, Taipei released a paper called "Integration of a (–Cu–S–)n plane in a metal–organic framework affords high electrical conductivity" on Nature Communications. Let's see which experiments the did based on MOF.

Designing highly conducting metal–organic frameworks (MOFs) is currently a subject of great interest for their potential applications in diverse areas encompassing energy storage and generation. Herein, a strategic design in which a metal–sulfur plane is integrated within a MOF to achieve high electrical conductivity, is successfully demonstrated. The MOF {[Cu2(6-Hmna)(6-mn)]·NH4}n (1, 6-Hmna?=?6-mercaptonicotinic acid, 6-mn?=?6-mercaptonicotinate), consisting of a two dimensional (–Cu–S–)n plane, is synthesized from the reaction of Cu(NO3)2, and 6,6′-dithiodinicotinic acid via the in situ cleavage of an S–S bond under hydrothermal conditions. A single crystal of the MOF is found to have a low activation energy (6?meV), small bandgap (1.34?eV) and a highest electrical conductivity (10.96?S?cm?1) among MOFs for single crystal measurements. This approach provides an ideal roadmap for producing highly conductive MOFs with great potential for applications in batteries, thermoelectric, supercapacitors and related areas.


In summary, a copper–sulfur-based MOF was successfully synthesized via the in situ cleavage of S–S bonds under hydrothermal conditions. These air stable crystals have the highest electrical conductivity (10.96?S?cm?1) among all single crystals of MOFs that have been reported to date. The high electrical conductivity originates from the integration of the (–Cu–S–)n plane in the structure. This is a new strategy for designing exceptionally high conductive MOFs. In addition, among its characteristic properties, the optical bandgap (1.34?eV) and theoretical bandgap (1.20 eV) permits this MOF to function as a low bandgap semiconductor with an electrical conductivity that increases with increasing temperature. Moreover, it has a low activation energy (6?meV), suggesting that a low energy would be required for charge transfer to occur. It is particularly noteworthy that this synthetic procedure is straightforward and simple, yet allows precise, self-assembly complexation to proceed. This significant finding offers a prototypical approach for producing a new class of highly electrically conductive metal–organic frameworks. We believe that these materials have substantial potential for use in the future. Further research is currently underway in our laboratory.

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