Graphene Field-Effect Transistor chip S20 - Field-Effect Transistor - XFNANO- High Quality Graphene,Black Phosphorus,Fullerene,Nanomaterials Supplier

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Graphene Field-Effect Transistor chip S20

Stock 0 piece Lead time: 停产

SKU	CAS No.	ID	Packaging	Parameters	Stock	Lead Time	Price	Purchase quantity
102554	7440-44-0	XF250	1 Piece	Chip dimensions:10mm x10mm	0	stop production	Logged in to view

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Product Details

Name:Graphenea Graphene Field-Effect Transistor chipS20

Characterizations

Chip dimensions：10mm x10mm

Chip Thickness ：675μm

Number of GFETs per chip：36

Gate Oxide thickness：90nm

Gate Oxide material：SiO2

Resistivity of substrate ：1-10 Ω.cm

Dirac point：10-40 V

Yield ：＞75%

Graphene field-effect mobility：＞1000cm²/V.s

Residual charge carrier density ：＜2x10¹²cm^-2

Application Fields

Graphene device research, chemical sensors, biosensors, bioelectronics, magnetic sensors, photodetectors

Related Information

Sealed,avoid light and keep at room temperature. Expiry date: one year

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