Product Details Name:Graphenea Graphene Field-Effect Transistor chipS20 Characterizations
Chip dimensions:10mm x10mm Chip Thickness :675μm Number of GFETs per chip:36 Gate Oxide thickness:90nm Gate Oxide material:SiO2 Resistivity of substrate :1-10 Ω.cm Dirac point:10-40 V Yield :>75% Graphene field-effect mobility:>1000cm2/V.s Residual charge carrier density :<2x1012 cm-2 Application Fields
Graphene device research, chemical sensors, biosensors, bioelectronics, magnetic sensors, photodetectors Related Information Sealed,avoid light and keep at room temperature. Expiry date: one year E-mail:sale@xfnano.com
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