操作提示

正在执行当前操作, 请稍等...

Hello,Welcome to XFNANO!
Boron Nitride film Home > Boron Nitride film
Single Layer H-BN Film on SIO2 substrate
SKU: 100175
CAS NO.: 7440-44-0
ID: XF059
Specifications:
Packaging: 1 box
Price: $Logged in to view
Stock 0 piece Lead time: out of stock

SKU CAS No. ID Packaging Parameters Stock Lead Time Price Purchase quantity
100175 7440-44-0 XF059 1 box 8mmx8mm, 4 pack 0 stop production Logged in to view
Express Service:

1kg freight$50, More than 1kg to ask the customer service, buy over$99999999Free shipping。

Single Layer CVD hexagonal Boron Nitride Film on 285 nm SiO2/Si substrates (p-doped)


Properties of BN film


  • 95% coverage

  • High Crystalline Quality

  • The Raman spectrum should peak at ~1369cm-1

         The Raman Signal of BN on SiO2/Si is very weak. To characterize h-BN on SiO2/Si using Raman spectroscopy, you need to use a blue or high power laser and the signal may not be detectable on certain commercial systems. For more information regarding Raman spectroscopy and characterization of h-BN on SiO2/Si, refer to the following paper: Hunting for Monolayer Boron Nitride: Optical and Raman Signatures .

        The h-BN film is grown via CVD onto copper foil, then transferred to the SiO2/Si substrate. To see characterizations of the film before transfer, see our related product, h-BN on Copper Foil.


    Applications:


        BN on SiO2/Si wafers are ideal for creating graphene/BN interfaces, allowing the graphene to be precisely gated, increasing mobility, and reducing scattering. h- BN is appealing as a substrate for graphene-based electronics because its surface is atomically smooth, it is free of dangling bonds, and has an analogous structure to graphene. Using our h-BN on SiO2/Si wafers in conjunction with graphene, we encourage you to explore graphene heterostructures for transistor applications.

WeChat scavenging
Online consultation

Enjoy online registration, online order and other convenient services